Analysis on pressure dependence of microcrystalline silicon by optical emission spectroscopy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 33, Issue 1, 2006, Pages 125-129

  Wu, Zhimeng ^a   Sun, Jian ^b   Lei, Qingsong ^a   Zhao, Ying ^b   Geng, Xinhua ^b   Xi, Jianping ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

Microcrystalline silicon; Optical emission spectroscopy; Raman spectroscopy; VHF PECVD

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ANALYSIS;

DARK CONDUCTIVITY; DEPOSITION RATE; MICROCRYSTALLINE SILICON; OPTICAL EMISSION SPECTROSCOPY; SILANE; VHF-PECVD;

SILICON;

EID: 33747034227     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.165     Document Type: Article

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