High-pressure plasma CVD for high-quality amorphous silicon

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 375-380

  Isomura, Masao ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HIGH PRESSURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

HIGH PRESSURE PLASMA;

AMORPHOUS SILICON;

EID: 0035253925     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00197-5     Document Type: Article

References (4)

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3. Nishikuni M., Haku H., Isomura M., Okamoto S., Sayama K., Takahama T., Matsuoka T., Tsuda S., Nakano S., Ohnisihi M., Kuwano Y. J. Non-Cryst. Solids. 114:1989;181.
4. Matsuda A., Tanaka K. Thin Solid Films. 92:1982;171.