InP bipolar ICs: Scaling roadmaps, frequency limits, manufacturable technologies

Proceedings of the IEEE

Volumn 96, Issue 2, 2008, Pages 271-286

  Rodwell, Mark J W ^a   Le, Minh ^b,c   Brar, Berinder ^d  

^a University of California   (United States)

^b Vitesse Semiconductor Corporation   (United States)

^c Evergreen Solar   (United States)

^d ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave devices; Submillimeter wave circuits; Submillimeter wave devices

Indexed keywords

CUTOFF FREQUENCY; DIGITAL INTEGRATED CIRCUITS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MIXED SIGNAL INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBMILLIMETER WAVES; TIMING CIRCUITS;

FREQUENCY LIMITS; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); HIGH-YIELD PROCESS; LABORATORY DEVICES; MILLIMETER WAVE CIRCUITS; MINIMUM FEATURE SIZES; SUBMILLIMETER-WAVE DEVICES; TECHNOLOGICAL CHALLENGES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 55849139613     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2007.911058     Document Type: Article

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