280 GHz f T InP DHBT with 1.2 μm 2 base-emitter junction area in MBE regrown-emitter technology

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 237-238

  Wei, Yun ^a   Scott, Dennis W ^a   Dong, Yingda ^a   Gossard, Arthur C ^a   Rodwell, Mark J ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE-EMITTER JUNCTION AREA; CUT-OFF FREQUENCY; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); REGROWN-EMITTER TECHNOLOGY;

CHEMICAL VAPOR DEPOSITION; DIFFUSION; MICROWAVES; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; VOLTAGE CONTROL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 18044365004     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367885     Document Type: Conference Paper

References (6)

1. D. Scott et al, 2002 IEEE Device Research Conference, Santa Barbara, CA, June 24-26.
2. Y. Wei et al, Submitted to IEEE Electron Device Letters.
3. M.J.W. Rodwell et al, International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 159-215, 2001
4. M. Rodwell et al, 2004 European Gallium Arsenide and Other Compound Semiconductors, Symposium, 6-7 October, Munich
5. J-S. Rieh et al, 2002 International Electron Devices Meeting. Technical Digest, pp.771-4. Piscataway, NJ, USA.
6. Z. Griffith et al, 2003 IEEE Indium Phosphide and Related Materials Conference, Kagoshima, Japan, May 31-June 4, 2004