First demonstration of sub-0.25μm-width emitter InP-DHBTs with >400 GHz f t and >400 GHz f max

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 553-556

  Hussain, T ^a   Royter, Y ^a   Hitko, D ^a   Montes, M ^a   Madhav, M ^a   Milosavljevic, I ^c   Rajavel, R ^a   Thomas, S ^a   Antcliffe, M ^a   Arthur, A ^a   Boegeman, Y ^a   Sokolich, M ^a   Li, J ^b   Asbeck, P ^b  

^a Hughes Aircraft Co   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DHBT; EMITTERS; SCANNING ELECTRON MICROGRAPHS (SEM); TRADEOFFS; EMITTER DEVICES; EMITTER RESISTANCE; EMITTER-BASE JUNCTIONS; INP-DHBT; LOW-POWER CONSUMPTION; LOWER-POWER CONSUMPTION; METAL WIDTH; PERFORMANCE; SCALINGS; STATE OF THE ART;

CAPACITANCE; ELECTRIC CONTACTS; ELECTRIC POWER UTILIZATION; EMITTER COUPLED LOGIC CIRCUITS; FREQUENCIES; INTEGRATED CIRCUIT LAYOUT; SCANNING ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS; CUTOFF FREQUENCY;

EID: 21644435770     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. J.C. Zolper, "Super-scaled InP HBTs for 150 GHz circuits," International Electron Devices Meeting, 2003, IEDM '03 Technical Digest, 8-10 Dec. 2003, pp. 30.1.1-30.1.4.
2. M. J. W. Rodwell, "Submicron Scaling of HBTs", IEEE Trans. On Electron Devices, Vol.48, N0. 11, Nov 2001 pp. 2606-2624
3. M. Chen, et al., "Patterned n+ Implant into InP Substrates for HBT Subcollector," Accepted for publication in IEEE Transaction of Electron Devices.
4. M. Feng, W. Hafez, J.-W. Lai. "Over 500 GHz InP Heterojunction Bipolar Transistors," International Conference on Indium Phosphide and Related Materials Proceedings, 2004, pp 653-658
5. Z Griffith et al., "InGaAs-InP MESA DHBTs With Simultaneously High Ft and Fmax and Low Ccb/Ic Ratio," IEEE Electron Device Letters, May 2004, pp 250-252
6. J.C. Li, et al., "Effects of device design on the thermal properties of InP-based HBTs," International Symposium on Compound Semiconductors Digest, 2003, pp. 205-206.
7. I. Harrison, et al., "Thermal Limitations of InP HBTs in 80- and 160-Gb ICs," IEEE Trans. Electron Devices, April 2004, pp. 529-534
8. D Hitko et al"A Low Power (45mW/latch) Static 150GHz CML Divider" to appear in 2005 International Compound IC Symposium (CSIC Symposium)