Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 313-316

  Parthasarathy, Navin ^a   Griffith, Zach ^a   Kadow, Christoph ^a   Singisetti, Uttam ^a   Rodwell, Mark J W ^a   Fang, Xiao Ming ^b   Loubychev, Dmitri ^b   Wu, Ying ^b   Fastenau, Joel M ^b   Liu, Amy W K ^b  

^a University of California   (United States)

^b IQE INC   (United States)

Author keywords

Collector pedestal; Heterojunction bipolar transistor (HBT); Indium phosphide (InP); Ion implantation

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

COLLECTOR PEDESTAL; DEVICE FOOTPRINT; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33646271350     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.872836     Document Type: Article

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