60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz f τ, BVCEO = 2.5V, and BVCBO = 2.7V

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 275-278

  Grifth, Zach ^a   Lind, Erik ^a   Rodwell, Mark J W ^a   Fangt, Xiao Ming ^b   Loubychev, Dmitri ^b   Wu, Ying ^b   Fastenau, Joel M ^b   Liu, Amy W K ^b  

^a Santa Barbara   (United States)

^b IQE INC   (United States)

Author keywords

InP heterojunction bipolar transistor

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; OPTICAL DESIGN; SEMICONDUCTOR MATERIALS; TRANSISTORS;

COLLECTOR (FLOTATION); COMPOUND SEMICONDUCTOR (CS); CONVENTIONAL MESA STRUCTURE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBTS); INGAAS/INALAS; INGAAS/INP; SUPERLATTICE (SL);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 46149095987     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319953     Document Type: Conference Paper

References (7)

1. M.J.W. Rodwell et al., Submicron Scaling of HBTs IEEE Trans. on Electron Devices, Vol. 48, pp. 2606-2624, November 2001.
2. M.J.W. Rodwell et al., De veloping bipolar transistors for Sub-mm-wave ampli ers and next-generation (300 GHz) digital circuits, Device Research Conference, Penn State, PA, June, 26-28, 2006.
3. 2, Device Research Conference, Penn State, PA, June, 26-28, 2006.
4. CBO = 3.4V, IEEE Int. Conf. on Indium Phosphide and Related Materials, Princeton, New Jersey, May, 7-11, 2006.
5. W. Hafez et al., Experimental demonstration of pseudomorphic heterojunction biploar transistor with cutoff frequencies above 600 GHz, Applied Physics Letters, vol. 86, no. 152101, pp. 1-3, 2005.
6. max = 340 GHz , Applied Physics Letters, vol. 87, no. 252109, pp. 1-3, 2005.
7. Bandprof, Semiconductor Device Simulation Tool, Prof. W. Frensley, University of Texas, Dallas.