GaAsSb DHBT IC technology for RF and microwave instrumentation

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 69-72

  Low, T S ^a   Dvorak, M W ^a   Farhoud, M ^a   Yeats, R E ^a   Iwamoto, M ^a   Essilfie, G K ^a   Engel, T ^a   Keppeler, B ^a   Chang, J S C ^a   Hadley, J ^a   Patterson, G ^a,b   Kellert, F ^a   Moll, N ^a   Bahl, S R ^a   Hutchinson, C P ^a   Ehlers, E ^a   Adamski, M E ^a   Culver, M K ^a   D'Avanzo, D C ^a   Shirley, T ^a  

^a AGILENT TECHNOLOGIES   (United States)

^b MBE Consulting Services   (United States)

Author keywords

DHBT; GaAsSb; Indium phosphide; Instrumentation; Transistor

Indexed keywords

DHBT; GAASSB; INSTRUMENTATION; MICROWAVE INSTRUMENTATION; MTTF;

CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVES; MIM DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; TELECOMMUNICATION SYSTEMS;

INTEGRATED CIRCUITS;

EID: 30944453326     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531760     Document Type: Conference Paper

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