A submicrometer 252 GHz fT and 283 GHz fMAX InP DHBT with reduced CBC using selectively implanted buried subcollector (SIBS)

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 136-138

  Li, James C ^a,b   Chen, Mary ^a   Hitko, Donald A ^a   Fields, Charles H ^a   Shi, Binqiang ^a   Rajavel, Rajesh ^a   Asbeck, Peter M ^b   Sokolich, Marko ^a  

^a Hughes Aircraft Co   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs); InP; Ion implant; Molecular beam epitaxy (MBE)

Indexed keywords

ELECTRIC CURRENTS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; SELECTIVELY IMPLANTED BURIED SUBCOLLECTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 15544369356     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.842734     Document Type: Article

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