Relaxation of high-energy heavy-ion induced bipolar plasmas in Si epilayer devices as a function of temperature

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Laird, Jamie S ^a,b   Onoda, Shinobu ^a   Hirao, Toshio ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED CIRCUITS; ENERGY DISSIPATION; EPILAYERS; EPITAXIAL GROWTH; HEAVY IONS; HIGH ENERGY PHYSICS; IONS; PROBABILITY DENSITY FUNCTION; QUANTUM WELL LASERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

AMBIPOLAR; CARRIER COLLECTIONS; CHARGE SCREENINGS; COMPLEX FUNCTIONS; ELECTRONIC COMPONENTS; ELECTRONIC ENERGY LOSSES; EPILAYER STRUCTURES; EXPERIMENTAL DATUMS; EXTERNAL CIRCUITS; HOLE PAIRS; INJECTION LEVELS; JUNCTION STRUCTURES; NONEQUILIBRIUM PLASMAS; PLASMA DECAYS; PLASMA DISPERSIONS; PULSE SHAPES; RADIAL DIMENSIONS; REVERSE BIASED JUNCTIONS; SUB MICRONS; TRANSIENT CURRENTS; TRANSIENT PULSES;

PLASMAS;

EID: 55249086968     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2974100     Document Type: Article

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