Temperature dependence of single-event transient current induced by heavy-ion microbeam on p+/n/n+ epilayer junctions

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2834-2839

  Guo, Gang ^a   Hirao, Toshio ^b   Laird, Jamie Stuart ^b   Onoda, Shinobu ^c   Wakasa, Takeshi ^c   Yamakawa, Takeshi ^c   Kamiya, Tomihiro ^b  

^a CHINA INSTITUTE OF ATOMIC ENERGY   (China)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c TOKAI UNIVERSITY   (Japan)

Author keywords

Charge collection; Diffused charge; Pn junction diode; Single event transient; Temperature dependence

Indexed keywords

DIFFUSION; ELECTRON TUNNELING; HEAVY IONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; WAVEFORM ANALYSIS;

CHARGE COLLECTION; DIFFUSED CHARGE; PN JUNCTION DIODE; SINGLE-EVENT TRANSIENT; TEMPERATURE DEPENDENCE;

TRANSIENTS;

EID: 8344242323     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835058     Document Type: Article

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