Heavy-Ion Induced Single-Event Transients in High-Speed InP-InGaAs Avalanche Photodiodes

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 2225-2232

  Laird, Jamie S ^a   Hirao, Toshio ^a   Onoda, Shinobu ^b   Ohyama, Hidenori ^c   Kamiya, Tomihiro ^d  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; BIT ERROR RATE; ELECTRIC SPACE CHARGE; HEAVY IONS; OPTICAL COMMUNICATION; OPTICAL FIBERS; OPTICAL LINKS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DARK CURRENT DEGRADATION; SINGLE-EVENT TRANSIENTS (SET);

PHOTODIODES;

EID: 1242265504     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821585     Document Type: Conference Paper

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