Charge collection efficiency of an irradiated cryogenic double-p silicon detector

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 462, Issue 3, 2001, Pages 474-483

  Borer, K ^a   Janos, S ^a   Li, Z ^b   Dezillie, B ^b   Da Via C ^c   Granata, V ^c   Casagrande, L ^d   De Boer, R W I ^d   Lourenco C ^d   Niinikoski, T O ^d   Palmieri, V G ^d   Chapuy, S ^e   Dimcovski, Z ^e   Grigoriev, E ^e   Bell, W ^f   Devine, S R H ^f   Ruggiero, G ^f   O'Shea, V ^f   Smith, K ^f   Berglund, P ^g   De Boer, W ^h   Hauler, F ^h   Heising, S ^h   Jungermann, L ^h   Abreu, M ⁱ   Rato, P ⁱ   Sousa, P ⁱ   Cindro, V ^j   Mikuz, M ^j   Zavrtanik, M ^j   Esposito, A ^k   Paul, S ^k   Buontempo, S ^l   D'Ambrosio, N ^l   Pagano, S ^l   Eremin, V ^m   Verbitskaya, E ^m   more..

^a UNIVERSITY OF BERN   (Switzerland)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c BRUNEL UNIVERSITY   (United Kingdom)

^d CERN   (Switzerland)

^e UNIVERSITY OF GENEVA   (Switzerland)

^f UNIVERSITY OF GLASGOW   (United Kingdom)

^g AALTO UNIVERSITY   (Finland)

^h UNIVERSITY OF KARLSRUHE   (Germany)

ⁱ LIP   (Portugal)

^j JO EF STEFAN INSTITUTE   (Slovenia)

^k TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^l UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^m IOFFE INSTITUTE   (Russian Federation)

more..

Author keywords

Cryogenic silicon detectors; Lazarus effect

Indexed keywords

CRYOGENICS; DIODES; ELECTRIC POTENTIAL; IRRADIATION; SILICON SENSORS;

CHARGE COLLECTION EFFICIENCY; CRYOGENIC SILICON DETECTORS; LAZARUS EFFECT;

PARTICLE DETECTORS;

EID: 18144446880     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00198-X     Document Type: Article

References (15)

1. Palmieri V.G.et al. Nucl. Instr. and Meth. A. 413:1998;475.
2. K. Borer et al. (RD39 Collab.), CERN/LHCC 98-27, DRDC P53 Add. 1, 1998.
3. K. Borer et al. (RD39 Collab.), Nucl. Instr. and Meth. A 440 (2000) 5.
4. Borer K.et al. Nucl. Instr. and Meth. A. 440:2000;17.
5. RD48 Collaboration, CERN/LHCC 2000-009, LEB Status Report/RD48, 1999.
6. Proceedings of the 1st International Conference on Radiation Effects on Semiconducting Materials, Detectors and Devices, Nucl. Instr. and Meth. A 388 (1997).
7. Beattie L.et al. Nucl. Instr. and Meth. A. 412:1998;238.
8. Dezillie B., Eremin V., Li Z. IEEE Trans. on Nucl. Sci. 46-3:1998;221.
9. Jones B.K., Santana J., McPherson M. Nucl. Instr. and Meth. A. 395:1997;81.
10. Chilingarov A., Sloan T. Nucl. Instr. and Meth. A. 399:1997;35.
11. Ougouag A.M.et al. IEEE Trans. on Nucl. Sci. NS-37:1990;2219.
12. P.J. Griffin et al., pre-print SAND92-0094, Sandia Natl. Lab., 1993.
13. Eremin V.et al. Sov. Phys. & Technol. of Semiconductors. 8:1974;1157.
14. Li Z., Kraner H.W. J. Electron. Mater. 21(7):1992;701.
15. Menichelli D.et al. Nucl. Instr. and Meth. A. 426:1999;135.