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Volumn 231, Issue 1-4, 2005, Pages 497-501
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Analysis of transient ion beam induced current in Si PIN photodiode
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Author keywords
BER; High energy charged particle; Single event transient current; Time resolved (or transient) ion beam induced current
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Indexed keywords
BIT ERROR RATE;
DEGRADATION;
ELECTRIC CURRENTS;
HIGH ENERGY PHYSICS;
PHOTODIODES;
SEMICONDUCTING SILICON;
BER;
HIGH-ENERGY CHARGED PARTICLES;
SINGLE EVENT TRANSIENT CURRENTS;
TIME RESOLVED (OR TRANSIENT) ION BEAM INDUCED CURRENTS;
ION BEAMS;
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EID: 33644540798
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2005.01.106 Document Type: Conference Paper |
Times cited : (3)
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References (13)
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