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Volumn 231, Issue 1-4, 2005, Pages 497-501

Analysis of transient ion beam induced current in Si PIN photodiode

Author keywords

BER; High energy charged particle; Single event transient current; Time resolved (or transient) ion beam induced current

Indexed keywords

BIT ERROR RATE; DEGRADATION; ELECTRIC CURRENTS; HIGH ENERGY PHYSICS; PHOTODIODES; SEMICONDUCTING SILICON;

EID: 33644540798     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.01.106     Document Type: Conference Paper
Times cited : (3)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.