-
1
-
-
0001376863
-
Thermally stimulated relaxation in solids
-
Lang D V 1979 Thermally stimulated relaxation in solids Topics in Applied Physics vol 37 ed P Braunlich (Berlin: Springer)
-
(1979)
Topics in Applied Physics
, vol.37
-
-
Lang, D.V.1
-
3
-
-
0041614156
-
Analysis of scanning deep level transient spectroscopy
-
10.1063/1.98573 0003-6951
-
Wada K, Ikuta K, Osaka J and Inoue N 1987 Analysis of scanning deep level transient spectroscopy Appl. Phys. Lett. 51 1617-19
-
(1987)
Appl. Phys. Lett.
, vol.51
, Issue.20
, pp. 1617-1619
-
-
Wada, K.1
Ikuta, K.2
Osaka, J.3
Inoue, N.4
-
5
-
-
33645073169
-
-
Laird J S 1999 Scanning ion deep level transient spectroscopy PhD Thesis School of Physics Melbourne, University of Melbourne, Australia p 380
-
(1999)
PhD Thesis
, pp. 380
-
-
Laird, J.S.1
-
6
-
-
0001323049
-
A theory of ion beam induced charge collection
-
10.1063/1.354471 0021-8979
-
Breese M B H 1993 A theory of ion beam induced charge collection J. Appl. Phys. 74 3789-99
-
(1993)
J. Appl. Phys.
, vol.74
, Issue.6
, pp. 3789-3799
-
-
Breese, M.B.H.1
-
7
-
-
0033339978
-
Scanning ion deep level transient spectroscopy
-
10.1016/S0168-583X(99)00329-8 0168-583X
-
Laird J S, Bardos R A, Jagadish C, Jamieson D N and Legge G J F 1999 Scanning ion deep level transient spectroscopy Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms 158 464-9
-
(1999)
Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms
, vol.158
, Issue.1-4
, pp. 464-469
-
-
Laird, J.S.1
Bardos, R.A.2
Jagadish, C.3
Jamieson, D.N.4
Legge, G.J.F.5
-
8
-
-
33645048726
-
Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions
-
Laird J S, Jagadish C, Jamieson D N and Legge G J F 2006 Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions J. Phys. D: Appl. Phys. 39 1347 (following article)
-
(2006)
J. Phys. D: Appl. Phys.
, vol.39
, pp. 1347
-
-
Laird, J.S.1
Jagadish, C.2
Jamieson, D.N.3
Legge, G.J.F.4
-
11
-
-
36049055816
-
Energy deposition by electron beams and δ rays
-
10.1103/PhysRev.170.391 0031-899X
-
Kobetich E J and Katz R 1968 Energy deposition by electron beams and δ rays Phys. Rev. 170 391
-
(1968)
Phys. Rev.
, vol.170
, Issue.2
, pp. 391
-
-
Kobetich, E.J.1
Katz, R.2
-
12
-
-
36849112146
-
Bandgap dependence and related features of radiation ionization energies in semiconductors
-
10.1063/1.1656484 0021-8979
-
Klein C 1968 Bandgap dependence and related features of radiation ionization energies in semiconductors J. Appl. Phys. 39 2029
-
(1968)
J. Appl. Phys.
, vol.39
, Issue.4
, pp. 2029
-
-
Klein, C.1
-
13
-
-
0001332240
-
Electron-hole-pair creation energies in semiconductors
-
10.1103/PhysRevLett.35.1522 0031-9007
-
Alig R C and Bloom S 1975 Electron-hole-pair creation energies in semiconductors Phys. Rev. Lett. 35 1522-5
-
(1975)
Phys. Rev. Lett.
, vol.35
, Issue.22
, pp. 1522-1525
-
-
Alig, R.C.1
Bloom, S.2
-
14
-
-
0036947519
-
Ion track structure and its effect in small size volumes of silicon
-
10.1109/TNS.2002.805366 0018-9499
-
Akkerman A and Barak J 2002 Ion track structure and its effect in small size volumes of silicon IEEE Trans. Nucl. Sci. 49 3022
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, Issue.6
, pp. 3022
-
-
Akkerman, A.1
Barak, J.2
-
15
-
-
0002861764
-
Problems relating to p-n junctions in silicon
-
10.1016/0038-1101(61)90054-5 0038-1101
-
Schockley W 1961 Problems relating to p-n junctions in silicon Solid-State Electron. 2 35
-
(1961)
Solid-State Electron.
, vol.2
, Issue.1
, pp. 35
-
-
Schockley, W.1
-
16
-
-
0005085691
-
-
10.1103/PhysRev.139.A1702 0031-899X
-
Rosenbrook W V 1965 Phys. Rev. 139 1702
-
(1965)
Phys. Rev.
, vol.139
, pp. 1702
-
-
Rosenbrook, W.V.1
-
18
-
-
0017014216
-
Measurements of bandgap narrowing in Si bipolar transistors
-
10.1016/0038-1101(76)90043-5 0038-1101
-
Slotboom J W and de Graaff H C 1976 Measurements of bandgap narrowing in Si bipolar transistors Solid-State Electron. 19 857-62
-
(1976)
Solid-State Electron.
, vol.19
, Issue.10
, pp. 857-862
-
-
Slotboom, J.W.1
De Graaff, H.C.2
-
19
-
-
0017482694
-
The pn-product in silicon
-
10.1016/0038-1101(77)90108-3 0038-1101
-
Slotboom J W 1977 The pn-product in silicon Solid-State Electron. 20 279-83
-
(1977)
Solid-State Electron.
, vol.20
, Issue.4
, pp. 279-283
-
-
Slotboom, J.W.1
-
20
-
-
33645066679
-
Minority carrier injection into heavily doped silicon
-
10.1016/0038-1101(77)90069-7 0038-1101
-
Slotboom J W 1977 Minority carrier injection into heavily doped silicon Solid-State Electron. 20 167-70
-
(1977)
Solid-State Electron.
, vol.20
, Issue.2
, pp. 167-170
-
-
Slotboom, J.W.1
-
21
-
-
0026820842
-
Unified apparent bandgap narrowing in n- and p-type silicon
-
10.1016/0038-1101(92)90051-D 0038-1101
-
Klaassen D B M, Slotboom J W and de Graaff H C 1992 Unified apparent bandgap narrowing in n- and p-type silicon Solid-State Electron. 35 125-9
-
(1992)
Solid-State Electron.
, vol.35
, Issue.2
, pp. 125-129
-
-
Klaassen, D.B.M.1
Slotboom, J.W.2
De Graaff, H.C.3
-
22
-
-
49949133713
-
-
10.1016/0031-8914(67)90062-6 0031-8914
-
Varshni Y P 1967 Physica 34 149
-
(1967)
Physica
, vol.34
, Issue.1
, pp. 149
-
-
Varshni, Y.P.1
-
23
-
-
0015636928
-
Recombination in light-pulse excited silicon at medium-high carrier concentration levels
-
10.1063/1.1662635 0021-8979
-
Tove P A and Andersson L G 1973 Recombination in light-pulse excited silicon at medium-high carrier concentration levels J. Appl. Phys. 44 2690-2
-
(1973)
J. Appl. Phys.
, vol.44
, Issue.6
, pp. 2690-2692
-
-
Tove, P.A.1
Andersson, L.G.2
-
24
-
-
0026243244
-
Theoretical prediction of the impact of Auger recombination on charge collection from an ion track
-
10.1109/23.108360 0018-9499
-
Edmonds L D 1991 Theoretical prediction of the impact of Auger recombination on charge collection from an ion track IEEE Trans. Nucl. Sci. 38 999-1004
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, Issue.5
, pp. 999-1004
-
-
Edmonds, L.D.1
-
25
-
-
0030128574
-
Device simulation of charge collection and single-event upset
-
10.1109/23.490901 0018-9499
-
Dodd P E 1996 Device simulation of charge collection and single-event upset IEEE Trans. Nucl. Sci. 43 561-75
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.2
, pp. 561-575
-
-
Dodd, P.E.1
-
26
-
-
2442589426
-
The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors
-
10.1016/j.nimb.2004.01.206 0168-583X B
-
Laird J S, Hirao T, Onoda S and Kamiya T 2004 The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors Nucl. Instrum. Methods Phys. Res. B 219-220 1015
-
(2004)
Nucl. Instrum. Methods Phys. Res.
, vol.219-220
, pp. 1015
-
-
Laird, J.S.1
Hirao, T.2
Onoda, S.3
Kamiya, T.4
-
28
-
-
0040978130
-
Modeling and simulation of charge collection properties for neutron irradiated silicon detectors
-
10.1016/0920-5632(93)90052-8 0920-5632
-
Li Z and Kraner H W 1993 Modeling and simulation of charge collection properties for neutron irradiated silicon detectors Nucl. Phys. B (Proc Suppl.) 32 398-409
-
(1993)
Nucl. Phys. B (Proc Suppl.)
, vol.32
, pp. 398-409
-
-
Li, Z.1
Kraner, H.W.2
-
29
-
-
44649114872
-
Plasma effects in semiconductor detectors
-
10.1016/0029-554X(67)90012-2 0029-554X
-
Tove P A and Seibt W 1967 Plasma effects in semiconductor detectors Nucl. Instrum. Methods Phys. Res. 51 261-9
-
(1967)
Nucl. Instrum. Methods Phys. Res.
, vol.51
, Issue.2
, pp. 261-269
-
-
Tove, P.A.1
Seibt, W.2
-
30
-
-
0015746834
-
Charge collection in silicon detectors for strongly ionizing particles
-
10.1016/0029-554X(73)90496-5 0029-554X
-
Seibt W, Sundstrom K E and Tove P A 1973 Charge collection in silicon detectors for strongly ionizing particles Nucl. Instrum. Methods Phys. Res. 113 317-24
-
(1973)
Nucl. Instrum. Methods Phys. Res.
, vol.113
, Issue.3
, pp. 317-324
-
-
Seibt, W.1
Sundstrom, K.E.2
Tove, P.A.3
-
32
-
-
0036659961
-
Theory of ultrafast phenomena in photoexcited semiconductors
-
10.1103/RevModPhys.74.895 0034-6861
-
Rossi F and Kuhn T 2002 Theory of ultrafast phenomena in photoexcited semiconductors Rev. Mod. Phys. 74 895-950
-
(2002)
Rev. Mod. Phys.
, vol.74
, Issue.3
, pp. 895-950
-
-
Rossi, F.1
Kuhn, T.2
-
33
-
-
0001114627
-
Ultrafast transient response of solid-state plasmas. Germanium I, theory and experiment
-
0556-2805
-
Elci A, Scully M O, Smirl A L and Matter J C 1977 Ultrafast transient response of solid-state plasmas. Germanium I, theory and experiment Phys. Rev. B (Solid State) 16 191-221
-
(1977)
Phys. Rev. B (Solid State)
, vol.16
, Issue.1
, pp. 191-221
-
-
Elci, A.1
Scully, M.O.2
Smirl, A.L.3
Matter, J.C.4
-
35
-
-
0000572650
-
Kinetics of high-density plasmas generated in Si by 1.06- and 0.53- mu [bold m] picosecond laser pulses
-
10.1103/PhysRevB.35.8166 0163-1829
-
Driel H M v 1987 Kinetics of high-density plasmas generated in Si by 1.06- and 0.53- mu [bold m] picosecond laser pulses Phys. Rev. B (Condens. Matter) 35 8166-76
-
(1987)
Phys. Rev. B (Condens. Matter)
, vol.35
, Issue.15
, pp. 8166-8176
-
-
Driel, H.M.V.1
-
39
-
-
0032652669
-
Modeling of observed double-junction effect
-
10.1016/S0168-9002(98)01482-X 0168-9002
-
Menichelli D, Bruzzi M, Li Z and Erimin V 1999 Modeling of observed double-junction effect Nucl. Instrum. Methods Phys. Res. Section A: Accelerators, Spectrometers, Detectors Associated Equipment 426 135-9
-
(1999)
Nucl. Instrum. Methods Phys. Res. Section A: Accelerators, Spectrometers, Detectors Associated Equipment
, vol.426
, Issue.1
, pp. 135-139
-
-
Menichelli, D.1
Bruzzi, M.2
Li, Z.3
Erimin, V.4
-
41
-
-
0031167885
-
Charge collection from ion tracks in simple epi diodes
-
10.1109/23.589631 0018-9499
-
Edmonds L D 1997 Charge collection from ion tracks in simple epi diodes IEEE Trans. Nucl. Sci. 44 1448
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, Issue.3
, pp. 1448
-
-
Edmonds, L.D.1
-
42
-
-
33645061535
-
On the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors
-
10.1063/1.106431 0003-6951
-
Tiwari S and Tischler M A 1992 On the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors Appl. Phys. Lett. 60 pp 1135-7
-
(1992)
Appl. Phys. Lett.
, vol.60
, Issue.9
, pp. 1135-1137
-
-
Tiwari, S.1
Tischler, M.A.2
-
44
-
-
33645088720
-
Diffusion length and surface recombination velocity: Injection dose dependence
-
Cavalcoli D and Cavallini A 1993 Diffusion length and surface recombination velocity: injection dose dependence Microsc. Semicond. Mater. 747-50
-
(1993)
Microsc. Semicond. Mater.
, pp. 747-750
-
-
Cavalcoli, D.1
Cavallini, A.2
-
46
-
-
36749120329
-
Charge transient spectroscopy
-
10.1063/1.93401 0003-6951
-
Farmer J W, Lamp C D and Meese J M 1982 Charge transient spectroscopy Appl. Phys. Lett. 41 1063-5
-
(1982)
Appl. Phys. Lett.
, vol.41
, Issue.11
, pp. 1063-1065
-
-
Farmer, J.W.1
Lamp, C.D.2
Meese, J.M.3
-
48
-
-
22944483477
-
High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors
-
10.1063/1.1947381
-
Laird J S, Hirao T, Onoda S and Itoh H 2005 High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors J. Appl. Phys. 98 013530
-
(2005)
J. Appl. Phys.
, vol.98
, pp. 013530
-
-
Laird, J.S.1
Hirao, T.2
Onoda, S.3
Itoh, H.4
-
49
-
-
0037059376
-
Effect of radiation induced deep level traps on Si detector performance
-
10.1016/S0168-9002(01)01640-0 0168-9002
-
Eremin V, Li Z and Verbitskaya E 2002 Effect of radiation induced deep level traps on Si detector performance Nucl. Instrum. Methods Phys. Res. Section A: Accelerators, Spectrometers, Detectors Associated Equipment 476 537-49
-
(2002)
Nucl. Instrum. Methods Phys. Res. Section A: Accelerators, Spectrometers, Detectors Associated Equipment
, vol.476
, Issue.3
, pp. 537-549
-
-
Eremin, V.1
Li, Z.2
Verbitskaya, E.3
-
51
-
-
25544433384
-
Comparison of signal rise-times in totally depleted P-type and N-type silicon surface barrier detectors
-
10.1016/0168-9002(95)00447-5 0168-9002
-
England J B A, Bentley M A, Field G M and Thompson D M 1995 Comparison of signal rise-times in totally depleted P-type and N-type silicon surface barrier detectors Nucl. Instrum. Methods Phys. Res. Section A: Accelerators, Spectrometers, Detectors Associated Equipment 364 537-51
-
(1995)
Nucl. Instrum. Methods Phys. Res. Section A: Accelerators, Spectrometers, Detectors Associated Equipment
, vol.364
, Issue.3
, pp. 537-551
-
-
England, J.B.A.1
Bentley, M.A.2
Field, G.M.3
Thompson, D.M.4
-
52
-
-
0041975729
-
The National University of Singapore high energy ion nano-probe facility: Performance tests
-
10.1016/S0168-583X(03)01003-6 0168-583X
-
Watt F, van Kan J A, Rajta I, Bettiol A A, Choo T F, Breese M B H and Osipowicz T 2003 The National University of Singapore high energy ion nano-probe facility: performance tests Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms 210 14-20
-
(2003)
Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms
, vol.210
, pp. 14-20
-
-
Watt, F.1
Van Kan, J.A.2
Rajta, I.3
Bettiol, A.A.4
Choo, T.F.5
Breese, M.B.H.6
Osipowicz, T.7
-
53
-
-
0000085788
-
Evolution from point to extended defects in ion implanted silicon
-
10.1063/1.365583 0021-8979
-
Benton J L, Libertino S, Kringhoj P, Eaglesham D J, Poate J M and Coffa S 1997 Evolution from point to extended defects in ion implanted silicon J. Appl. Phys. 82 120-5
-
(1997)
J. Appl. Phys.
, vol.82
, Issue.1
, pp. 120-125
-
-
Benton, J.L.1
Libertino, S.2
Kringhoj, P.3
Eaglesham, D.J.4
Poate, J.M.5
Coffa, S.6
-
54
-
-
0035388003
-
Development of a new data collection system and chamber for microbeam and laser investigations of single event phenomena
-
10.1016/S0168-583X(01)00565-1 0168-583X
-
Laird J S, Hirao T, Mori H, Onoda S, Kamiya T and Itoh H 2001 Development of a new data collection system and chamber for microbeam and laser investigations of single event phenomena Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms 181 87-94
-
(2001)
Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms
, vol.181
, Issue.1-4
, pp. 87-94
-
-
Laird, J.S.1
Hirao, T.2
Mori, H.3
Onoda, S.4
Kamiya, T.5
Itoh, H.6
-
55
-
-
0042795133
-
Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics
-
10.1016/S0168-583X(99)00355-9 0168-583X
-
Schone H, Walsh D S, Sexton F W, Doyle B L, Dodd P E, Aurand J F and Wing N 1999 Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms 158 424-31
-
(1999)
Nucl. Instrum. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms
, vol.158
, Issue.1-4
, pp. 424-431
-
-
Schone, H.1
Walsh, D.S.2
Sexton, F.W.3
Doyle, B.L.4
Dodd, P.E.5
Aurand, J.F.6
Wing, N.7
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