Effects of gamma and heavy ion damage on the impulse response and pulsed gain of a low breakdown voltage Si Avalanche Photodiode

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3786-3793

  Laird, Jamie S ^a   Onoda, Shinobu ^b   Hirao, Toshio ^b   Becker, Heidi ^a   Johnston, Allan ^a   Itoh, Hisayoshi ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; PHOTODIODES; RADIATION EFFECTS;

ENHANCED IONIZATION DAMAGE; GUARD RING ISOLATION OXIDE; ION MICROBEAM;

HEAVY IONS;

EID: 33846287909     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886042     Document Type: Conference Paper

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