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Volumn 37, Issue 23, 1998, Pages 3257-3260

Photopatterned hydrosilylation on porous silicon

Author keywords

Hydrosilylations; Luminescence; Optoelectronics; Photolithography; Silicon

Indexed keywords

SILICON;

EID: 0032542258     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3773(19981217)37:23<3257::AID-ANIE3257>3.0.CO;2-1     Document Type: Article
Times cited : (235)

References (28)
  • 15
    • 0345055314 scopus 로고    scopus 로고
    • Angew. Chem. Int. Ed. 1998, 37, 2462-2464.
    • (1998) Angew. Chem. Int. Ed. , vol.37 , pp. 2462-2464
  • 16
    • 33646094975 scopus 로고    scopus 로고
    • Average of three samples for surface 1, average of two samples for surface 2
    • Average of three samples for surface 1, average of two samples for surface 2.
  • 18
    • 33646110292 scopus 로고    scopus 로고
    • Resolution as observed through a microscope at 30 times magnification
    • Resolution as observed through a microscope at 30 times magnification.
  • 26
    • 0000588771 scopus 로고
    • The low incorporation observed at 650 nm is presumably almost exclusively a result of reaction with dangling bonds (ref. [20]) although migration of photogenerated excitons from the bulk into the porous layer may occur to a small extent: V. V. Doan, R. M. Penner, M. J. Sailor, J. Phys. Chem. 1993, 97, 4505-4508.
    • (1993) J. Phys. Chem. , vol.97 , pp. 4505-4508
    • Doan, V.V.1    Penner, R.M.2    Sailor, M.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.