Suppression of stress-induced leakage current after Fowler-Nordheim stressing by deuterium pyrogenic oxidation and deuterated poly-si deposition

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1192-1197

  Mitani, Yuichiro ^b   Satake, Hideki ^b   Itoh, Hitoshi ^b   Toriumi, Akira ^a,c  

^a IEEE

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Deuterium; Gate oxide; MOS capacitors; Oxidation; Poly Si; Stress induced leakage current (SILC)

Indexed keywords

ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DESORPTION; DEUTERIUM; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH;

DEUTERATED MONOSILANE; ELECTRON INJECTION; FOWLER-NORDHEIM STRESSING; GATE OXIDE; HYDROGENATED MONOSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PYROGENIC OXIDATION; STRESS INDUCED LEAKAGE CURRENT; THERMAL DESORPTION;

POLYSILICON;

EID: 0036638424     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013275     Document Type: Article

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