Properties of nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H 2 at various substrate temperatures

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 561-565

  Tabata, Akimori ^a   Komura, Yusuke ^a   Hoshide, Yoshiki ^a   Narita, Tomoki ^b   Kondo, Akihiro ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b GIFU UNIVERSITY   (Japan)

Author keywords

3C SiC; Hot wire CVD; Low temperature deposition; Nanoorystalline; Silicon carbide

Indexed keywords

ABSORPTION; CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; DIFFRACTION; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HOLOGRAPHIC INTERFEROMETRY; INFRARED SPECTROSCOPY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; THICK FILMS; THIN FILMS; VAPORS; WIRE;

3C-SIC; CRYSTALLINITY; CUBIC SILICON CARBIDES; FOURIER TRANSFORM INFRARED ABSORPTIONS; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; HOT-WIRE CVD; LOW-TEMPERATURE DEPOSITION; MONOTONICALLY; NANOCRYSTALLINE; NANOORYSTALLINE; SIC THIN FILMS; SPIN DENSITIES; SUBSTRATE TEMPERATURES;

AMORPHOUS FILMS;

EID: 54249157064     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.561     Document Type: Article

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