Atomically flat 3C-SiC epilayers by low pressure chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6633-6637

  Ishida, Yuuki ^a   Takahashi, Tetsuo ^a   Okumura, Hajime ^a   Yoshida, Sadafumi ^a   Sekigawa, Toshihiro ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

3C SiC; Atomically flat surfaces; Gas velocity; Heteroepitaxial growth; LPCVD; PL; XRD

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; HYDROGEN; PHOTOLUMINESCENCE; PROPANE; SEMICONDUCTING SILICON; SILANES; SILICON CARBIDE; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

HETEROEPITAXIAL GROWTH; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0031271044     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6633     Document Type: Article

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