Amorphous and microcrystalline silicon deposited by low-power electron-cyclotron resonance plasma-enhanced chemical-vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 38-49

  Conde, João Pedro ^a   Schotten, Volker ^b   Arekat, Safwan ^c   Brogueira, Pedro ^a   Sousa, Rui ^a   Chu, Virginia ^b  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b INESC   (Portugal)

^c UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

Conductivity; ECR; Hydrogen evolution; Hydrogenated amorphous silicon; Infrared spectroscopy; Microcrystalline silicon; Raman spectroscopy; Subgap defect density

Indexed keywords

EXCITATION GAS; HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON; MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBGAP DEFECT DENSITY;

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON CYCLOTRON RESONANCE; INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; RAMAN SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 0030684964     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.38     Document Type: Article

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