150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide Substrates

Journal of the Electrochemical Society

Volumn 148, Issue 7, 2001, Pages

  Gleskova, H ^a   Wagner, S ^a,d   Gasparik V ^b   Kovac P ^c  

^a Princeton University   (United States)

^b Physics and Informatics   (Slovakia)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000602692     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1373661     Document Type: Article

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