Accurate extraction of effective channel length and source/drain series resistance in ultrashort-channel MOSFETs by iteration method

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2779-2784

  Kim, Junsoo ^a   Lee, Jaehong ^a   Song, Ickhyun ^a   Yun, Yeonam ^b   Lee, Jong Duk ^a   Park, Byung Gook ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Channel resistance method (CRM); Effective channel length; Gate channel capacitance; Mobility; MOSFETs; Source drain series resistance

Indexed keywords

CHANNEL RESISTANCE METHOD (CRM); EFFECTIVE CHANNEL LENGTH; GATE-CHANNEL CAPACITANCE; MOBILITY; MOSFETS; SOURCE/DRAIN SERIES RESISTANCE;

ITERATIVE METHODS;

EID: 53649109251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003081     Document Type: Article

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