Zero-point correction of the carrier density in the measurement of MOS inversion-layer mobility

Solid-State Electronics

Volumn 47, Issue 9, 2003, Pages 1457-1459

  Terada, Kazuo ^a   Okamoto, Shinya ^a  

^a HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

Carrier density in MOS inversion layer; Carrier mobility measurement; MOS capacitance measurement

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; GATES (TRANSISTOR); MEASUREMENT ERRORS; MOSFET DEVICES; THRESHOLD VOLTAGE;

GATE VOLTAGE;

CARRIER CONCENTRATION;

EID: 0038040554     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00075-3     Document Type: Article

References (3)

1. Sodini C.G., Ekstedt T.W., Moll J.L. Charge accumulation and mobility in thin dielectric MOS transistors. Solid State Electron. 25:1982;833-841.
2. Takagi S., Toriumi A., Iwase M., Tango H. On the universality of inversion layer mobility in Si MOSFET's: Part I - Effects of substrate impurity concentration. IEEE Trans. Electron Dev. 41:1994;2357-2362.
3. Terada K., Nishiyama K., Hatanaka K. Comparison of MOSFET-threshold-voltage extraction methods. Solid-State Electron. 45:2001;35-40.