Extraction of effective carrier velocity in RF MOSFETs

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Volumn , Issue , 2007, Pages 72-75

  Yun, Yeonam ^a   Kang, In Man ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Shin, Hyungeheol ^a  

^a Seoul National University   (South Korea)

Author keywords

Carrier velocity; MOSFET; S parameters

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; DRAIN CURRENT; GATE DIELECTRICS; SCATTERING PARAMETERS;

CARRIER VELOCITY; INVERSION CHARGE; LINEAR APPROXIMATION;

MOSFET DEVICES;

EID: 34547378607     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2007.322772     Document Type: Conference Paper

References (9)

1. Seonghearn Lee, "A new method to extract, carrier velocity in sub-01-μ m MOSFETs using RF measurements," IEEE Trans. Nanotechnology., vol. 5, no. 3, pp. 163-166, May 2006.
2. A. Lochtefeld and D. A. Antoniadis, "On experimental determination of carrier velocity in deeply scaled NMOS:How close to the thermal limit?", IEEE Electron Device Lett., vol. 22, no,. 2, pp. 95-97, February 2001.
3. Yannis Tsividis, Operation and Modeling of the MOS Transistor, McGraw Hill, 1999
4. Ben G. Streetman and Sanjay Banerjee, Solid State Electronic Devices, Prentice Hall, 2000.
5. I. M. Kang, J. D. Lee, and H. Shin, "Modeling and parameter extraction of RF MOSFETs" SEMICON Korea STS 2005, pp. 223-226, February 2005.
6. Y. Yoon, H. Lee, I. M. Kang, B. G. Park, J. D. Lee, and H. Shin, "Random telegraph, noise in 130 nm n-MOS and p-MOS transistors", IEEE Device Research Conference 2006, pp. 283-284, June 2006.
7. Yuan Taur, Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998
8. B. Cheng, V.R. Rao, and J. C. S. Woo, "Exploration of velocity overshoot in a high-performance deep sub-0.1 um SOT MOSFET with asymmetric channel profile", IEEE Electron Device Lett., Vol. 20, no. 10, pp. 538-540, October 1999.
9. G. G. Shahidi and Dimitri A. Antoniadis, "Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers", IEEE Electron Device Lett., Vol. 9, No. 2. pp. 94-96, February 1988