Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimisation in deep submicron technologies

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 166-167

  Biesemans, S ^a   Hendriks, M ^a   Kubicek, S ^a   De Meyer, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ERRORS; GATES (TRANSISTOR); OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; VLSI CIRCUITS;

CONVENTIONAL EXTRACTION METHODS; DEEP SUBMICRON TECHNOLOGIES; DESIGN OF EXPERIMENTS TECHNIQUE; JUNCTION DOPING PROFILE; SHIFT AND RATIO METHOD; SHORT CHANNEL EFFECT;

MOSFET DEVICES;

EID: 0029702280     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)