Accurate channel length extraction by split C - V measurements on short-channel MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 615-618

  Severi, S ^a,b   Curatola, G ^c   Kerner, C ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Capacitance measurement; MOSFETs; P n junctions; Simulation

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); SEMICONDUCTOR JUNCTIONS;

CHANNEL LENGTH; PROCESS SIMULATIONS; QUANTUM-MECHANICAL EFFECTS; SCANNING SPREADING RESISTANCE MEASUREMENTS;

MOSFET DEVICES;

EID: 33745656207     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.877711     Document Type: Article

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