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Volumn 28, Issue 5, 2007, Pages 425-427

Extraction of π-type substrate resistance based on three-port measurement and the model verification up to 110 GHz

Author keywords

Macromodel; RF MOSFETs; Substrate resistance; Three port

Indexed keywords

ELECTRIC ADMITTANCE; EXTRACTION; FREQUENCY METERS; MATHEMATICAL MODELS; SUBSTRATES;

EID: 34247579207     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895395     Document Type: Article
Times cited : (8)

References (8)
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    • S. H.-M. Jen, C. C. Enz, D. R. Pehlke, M. Schroter, and B. J. Sheu, "Accurate modeling and parameter extraction for MOS transistor valid up to 10 GHz," IEEE Trans. Electron Devices, vol. 46, no. 11, pp. 2217-2227, Nov. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.11 , pp. 2217-2227
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  • 2
    • 0034499762 scopus 로고    scopus 로고
    • On the high-frequency characteristics of substrate resistance in RF MOSFETs
    • Dec
    • Y. Cheng and M. Matloubian, "On the high-frequency characteristics of substrate resistance in RF MOSFETs," IEEE Electron Device Lett., vol. 21, no. 12, pp. 604-606, Dec. 2000.
    • (2000) IEEE Electron Device Lett , vol.21 , Issue.12 , pp. 604-606
    • Cheng, Y.1    Matloubian, M.2
  • 3
    • 23944499921 scopus 로고    scopus 로고
    • MOSFET modeling for RE IC design
    • Jul
    • Y. Cheng, M. J. Deen, and C. H. Chen, "MOSFET modeling for RE IC design," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1286-1303, Jul. 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , Issue.7 , pp. 1286-1303
    • Cheng, Y.1    Deen, M.J.2    Chen, C.H.3
  • 4
    • 0036645960 scopus 로고    scopus 로고
    • A simple and accurate method for extracting substrate resistance of RF MOSFETs
    • Jul
    • J. Han, M. Je, and H. Shin, "A simple and accurate method for extracting substrate resistance of RF MOSFETs," IEEE Electron Device Lett., vol. 23, no. 7, pp. 434-436, Jul. 2002.
    • (2002) IEEE Electron Device Lett , vol.23 , Issue.7 , pp. 434-436
    • Han, J.1    Je, M.2    Shin, H.3
  • 5
    • 22344437011 scopus 로고    scopus 로고
    • Extraction of substrate parameters for RF MOSFETs based on four-port measurement
    • Jun
    • S. D. Wu, G. W. Huang, K. M. Chen, C. Y. Chang, H. C. Tseng, and T. L. Hsu, "Extraction of substrate parameters for RF MOSFETs based on four-port measurement," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 6, pp. 437-439, Jun. 2005.
    • (2005) IEEE Microw. Wireless Compon. Lett , vol.15 , Issue.6 , pp. 437-439
    • Wu, S.D.1    Huang, G.W.2    Chen, K.M.3    Chang, C.Y.4    Tseng, H.C.5    Hsu, T.L.6
  • 6
    • 0036541717 scopus 로고    scopus 로고
    • Parameter extraction of accurate and scalable substrate resistance components in RF MOSFETs
    • Apr
    • Y. Cheng and M. Matloubian, "Parameter extraction of accurate and scalable substrate resistance components in RF MOSFETs," IEEE Electron Device Lett., vol. 23, no. 4, pp. 221-223, Apr. 2002.
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  • 7
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    • Gate bias dependence of the substrate signal coupling effect in RF MOSFETs
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    • M. Je and H. Shin, "Gate bias dependence of the substrate signal coupling effect in RF MOSFETs," IEEE Electron Device Lett., vol. 24, no. 3, pp. 183-185, Mar. 2003.
    • (2003) IEEE Electron Device Lett , vol.24 , Issue.3 , pp. 183-185
    • Je, M.1    Shin, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.