RF split capacitance-voltage measurements of short-channel and leaky MOSFET devices

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 772-774

  San Andres E ^a   Pantisano, L ^b   Ramos, J ^b   Severi, S ^b,c   Trojman, L ^b,c   De Gendt, S ^b,c   Groeseneken, G ^b,c  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Capacitance measurement; MOSFET; RF; Ultrathin gate dielectric

Indexed keywords

CAPACITANCE MEASUREMENT; GATES (TRANSISTOR); LEAKAGE CURRENTS; RADIOFREQUENCY SPECTROSCOPY; VOLTAGE MEASUREMENT;

GATE LEAKAGE; ULTRATHIN GATE DIELECTRIC;

MOSFET DEVICES;

EID: 33748514573     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.881089     Document Type: Article

References (8)

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