Nonscaling of MOSFET's linear resistance in the deep submicrometer regime

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 131-133

  Esseni, D ^b   Iwai, H ^a,c   Saito, M ^c   Ricco B ^a,b  

^a IEEE

^b UNIVERSITY OF BOLOGNA   (Italy)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; SEMICONDUCTOR DOPING; SUBSTRATES;

PARASITIC RESISTANCE;

MOSFET DEVICES;

EID: 0032047730     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663537     Document Type: Article

References (13)

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