Limitations of shift-and-ratio based Leff extraction techniques for MOS transistors with halo or pocket implants

IEEE Electron Device Letters

Volumn 21, Issue 3, 2000, Pages 133-136

  Van Meer, Hans ^a,b   Henson, Kirklen ^a   Lyu, Jeong Ho ^a   Rosmeulen, Maarten ^a,b   Kubicek, Stefan ^a,b   Collaert, Nadine ^c   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CARRIER MOBILITY; COMPUTER SIMULATION; ION IMPLANTATION; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING;

DEEP SUBMICRON TRANSISTORS; POCKET IMPLANTS; SHIFT AND RATIO METHOD;

MOSFET DEVICES;

EID: 0033877179     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.823579     Document Type: Article

References (12)

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