Measurement of the state of stress in silicon with micro-Raman spectroscopy

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7195-7201

  Harris, Stephen J ^a   O'Neill, Ann E ^a   Yang, Wen ^a   Gustafson, Peter ^a   Boileau, James ^a   Weber, W H ^b   Majumdar, Bhaskar ^c   Ghosh, Somnath ^d  

^a FORD MOTOR COMPANY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

^d Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; DUCTILE FRACTURE; MICROCRACKS; POLARIZATION; RAMAN SPECTROSCOPY; SILICON WAFERS; STRESS ANALYSIS;

LOAD TRANSFERS; RAMAN SHIFTS; SILICON PHONON DEFORMATION POTENTIALS;

SEMICONDUCTING SILICON;

EID: 11044239189     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808244     Document Type: Article

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