SCOPUS 정보 검색 플랫폼

Volumn 26, Issue 5, 2004, Pages 235-239

Composition and stress analysis in Si structures using micro-Raman spectroscopy

(6) McCarthy, John a Bhattacharya, S b Perova, T S a Moore, R A a Gamble, H b Armstrong, B M b

b QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

Low pressure chemical vapour deposition; Raman scattering; Relaxed silicon germanium; Strained silicon; Transmission electron microscopy

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALS; RAMAN SPECTROSCOPY; STRAIN MEASUREMENT; STRESS ANALYSIS; SUBSTRATES; THIN FILMS;

CUBIC CRYSTALS; STRAINED SILICON TECHNOLOGY; UNDERLYING LAYERS;

SILICON;

METAL OXIDE; SILICON;

ARTICLE; ELECTRIC FIELD; ELECTRON MICROSCOPY; MATHEMATICAL ANALYSIS; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SEMICONDUCTOR; SPECTROSCOPY; STRESS STRAIN RELATIONSHIP; TRANSMISSION ELECTRON MICROSCOPY;

COMPUTER CHIPS; CRYSTALS; RAMAN SPECTRA; SILICON; STRAINS; STRESS ANALYSIS; SUBSTRATES; THIN FILMS;

EID: 6344247467 PISSN: 01610457 EISSN: None Source Type: Journal
DOI: 10.1002/sca.4950260504 Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.