High-spatial-resolution Raman microscopy of stress in shallow-trench- isolated Si structures

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Poborchii, Vladimir ^a,b   Tada, Tetsuya ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

LENSES; NUMERICAL METHODS; RAMAN SPECTROSCOPY; SILICON; STRUCTURAL ANALYSIS;

LASER PENETRATION; SPATIAL RESOLUTION; STRESS DETECTION;

STRESS ANALYSIS;

EID: 33845427636     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2400057     Document Type: Article

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