Novel parameter extraction method for low field drain current of nano-scaled MOSFETs

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2007, Pages 265-267

  Tanaka, Takuji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; MATHEMATICAL MODELS; PARAMETER EXTRACTION; ROBUSTNESS (CONTROL SYSTEMS); SEMICONDUCTOR DEVICE STRUCTURES;

MODEL PARAMETERS;

MOSFET DEVICES;

EID: 34548821243     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2007.374496     Document Type: Conference Paper

References (7)

1. Y. Taur, D. S. Zicheiman, D. R. Lombardi, P. J, Restle, C. H. Hsu, H. I. Nanafi, M, R. Wordeman, B. Davari, and G. G. Shahidi, IEEE Eleo. Dev. Lett. 13 p.267, 1992.
2. C. Mourrain. B. Cretu, G. Ghibaudo, and P. Cottin, Int. Conf. Microelec. Test Struct. p.181, 2000.
3. B. Cretu, T. Boutchacha, G. Ghibaudo, and F. Balestra, Electron. Lett. 37p.717, 2001.
4. Y Taur, IEEE Elec. Dev. 47 p.160, 2000;
5. H. van Meer, K. Henson, J.-H. Lyu, M. Rosmeulen, S. Kubicek, N. Collaert, and K, De Meyer, IEEE Elec. Dev. Lett. 13 p.133, 2000.
6. Yuhua Chang, Min-Chie Jeng, Zhihong Liu, Jianhui Huang, Mansun Chan, Kai Chen, Ping Keung Ko, and Chenming Hu, IEEE. Elec. Dev. 44 p.277, 1997.
7. Takuji Tanaka, Ken-ichi Goto, Ryou Nakamura, and Shigeo Satoh, Jpn. J. of Appl. Phys. 44 p.2424, 2005.