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Volumn 780, Issue , 2005, Pages 181-186

Low frequency noise in Si-based MOS devices

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EID: 33749462812     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036727     Document Type: Conference Paper
Times cited : (5)

References (14)
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    • (2000) Analog Integrated Circuits and Signal Processing , pp. 25
    • Rozeau, O.1    Jomaah, J.2    Haendler, S.3    Boussey, J.4    Balestra, F.5
  • 6
    • 0035310696 scopus 로고    scopus 로고
    • Low-frequency noise in thin gate oxide MOSFETs
    • R. Kolarova, T. Skotnicki, and J.A. Chroboczek, "Low-frequency noise in thin gate oxide MOSFETs", Mic. Rel., 41, 579, (2000).
    • (2000) Mic. Rel. , vol.41 , pp. 579
    • Kolarova, R.1    Skotnicki, T.2    Chroboczek, J.A.3
  • 7
    • 0028549082 scopus 로고
    • The impact of device scaling on the current fluctuations in MOSFET's
    • M. H. Tsai and T.P. Ma, "The impact of device scaling on the current fluctuations in MOSFET's", IEEE-Transactions-on-Electron-Devices., 41, 2061 (1994).
    • (1994) IEEE-transactions-on-electron-devices. , vol.41 , pp. 2061
    • Tsai, M.H.1    Ma, T.P.2
  • 8
    • 0032184369 scopus 로고    scopus 로고
    • 1/f Noise in CMOS transistors for analog applications from subthreshold to saturation
    • C. Jakobson, I. Bloom, Y. Nemirovsky, "1/f noise in CMOS transistors for analog applications from subthreshold to saturation", Solid-State-Electronics, 42, 1807 (1998).
    • (1998) Solid-state-electronics , vol.42 , pp. 1807
    • Jakobson, C.1    Bloom, I.2    Nemirovsky, Y.3
  • 9
    • 0032678739 scopus 로고    scopus 로고
    • On the flicker noise in submicron silicon MOSFET
    • E. Simoen and C.Claeys, "On the flicker noise in submicron silicon MOSFET", Solid-State-Electronics, 43, 865 (1999).
    • (1999) Solid-state-electronics , vol.43 , pp. 865
    • Simoen, E.1    Claeys, C.2
  • 11
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    • On the low frequency noise in fully depleted and double-gate SOI transistors
    • Bologna, April
    • L. Zafari, F. Daugé, J. Jomaah and G. Ghibaudo, "On the low frequency noise in fully depleted and double-gate SOI transistors", Proc. ULIS'2005, Bologna, April 2005.
    • (2005) Proc. ULIS'2005
    • Zafari, L.1    Daugé, F.2    Jomaah, J.3    Ghibaudo, G.4
  • 14
    • 33749486366 scopus 로고    scopus 로고
    • Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform
    • 27.6.1-4
    • B. Tavel, M. Bidaud et al, "Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform", IEEE-International-Electron-Devices- Meeting-2003, 27.6.1-4, (2003).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.