Ballistic electron emission spectroscopy on Ag/Si devices

Nanotechnology

Volumn 19, Issue 37, 2008, Pages

  Bannani, A ^a   Bobisch, C A ^a,b   Matena, M ^a,c   Moller R ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF BASEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; BALLISTICS; BUILDING MOVING; ELECTRON EMISSION; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; EPITAXIAL LAYERS; EXPLOSIVES; HYDROGEN; MOLECULAR BEAM EPITAXY; MOLECULAR SPECTROSCOPY; SILICON; SILVER; SPECTRUM ANALYSIS;

AG FILMS; BALLISTIC ELECTRON EMISSION SPECTROSCOPY; BARRIER HEIGHT; POLY-CRYSTALLINE; SI(111);

SCHOTTKY BARRIER DIODES;

CRYSTALLIN; HYDROGEN; SILICON; SILVER;

ARTICLE; BALLISTICS; DEVICE; FILM; FLAME PHOTOMETRY; PRIORITY JOURNAL;

EID: 51349110053     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/37/375706     Document Type: Article

References (45)

1. Binnig G, Rohrer H, Gerber Ch and Weibel E 1982 Appl. Phys. Lett. 40 178
2. Binnig G, Rohrer H, Gerber Ch and Weibel E 1983 Phys. Rev. Lett. 50 120-3
3. Kaiser W J and Bell L D 1988 Phys. Rev. Lett. 60 1406
4. Bell L D and Kaiser W J 1988 Phys. Rev. Lett. 61 2368
5. Prietsch M 1995 Phys. Rep. 253 163
6. Bell L D and Kaiser W J 1996 Annu. Rev. Mater. Sci. 26 189-222
7. de Andres P L, Garcia-Vidal F J, Reuter K and Flores F 2001 Prog. Surf. Sci. 66 3
8. Narayanamurti V and Kozhevnikov M 2001 Phys. Rep. 349 447
9. Troadec C et al 2004 Nanotechnology 15 1818
10. Li Wenjie et al 2005 J. Phys. Chem. B 109 6252
11. Özcan S et al 2007 Appl. Phys. Lett. 90 092107
12. Bannani A, Bobisch C and Möller R 2007 Science 315 1824
13. Braun F 1874 Pogg. Ann. 153 556
14. Schottky W 1939 Z. Phys. 113 367
15. Lee E Y, Sirringhaus H, Kafader U and von Känel H 1995 Phys. Rev. B 52 1816
16. Sirringhaus H, Lee E Y and von Känel H 1994 Phys. Rev. Lett. 73 577
17. Sirringhaus H, Lee E Y and von Känel H 1995 Phys. Rev. Lett. 74 3999
18. Sirringhaus H, Lee E Y and von Känel H 1995 Surf. Sci. 331-3 1277-82
19. Meyer T and von Känel H 1997 Phys. Rev. Lett. 78 3133
20. Zhu S et al 2000 Semicond. Sci. Technol. 15 349-56
21. Mönch W 2004 Electronic Properties of Semiconductor Interfaces 43rd edn (Berlin: Springer)
22. Mönch W 1996 J. Vac. Sci. Technol. B 14 2985
23. Altfeder I B, Golovchenko J A and Narayanamurti V 2001 Phys. Rev. Lett. 87 056801
24. Weilmeier M K, Rippard W H and Buhrman R A 1999 Phys. Rev. B 59 2521
25. Weilmeier M K, Rippard W H and Buhrman R A 2000 Phys. Rev. B 61 7161
26. Müller T and Nienhaus H 2003 J. Appl. Phys. 93 924
27. Butcher M J, Jones F H and Beton P H 2000 J. Vac. Sci. Technol. B 18 13
28. Winau D, Itoh H, Schmid A K and Ichinokawa T 1994 J. Vac. Sci. Technol. B 12 2082
29. Meyer G and Rieder K H 1994 Appl. Phys. Lett. 64 3560
30. Huang L, Chey S J and Weaver J H 1998 Surf. Sci. Lett. 416 L1101-6
31. Gavioli L et al 1999 Phys. Rev. Lett. 82 129
32. Horn-von Hoegen M et al 1995 Surf. Sci. 331-333 575-9
33. Horn-von Hoegen M et al 1995 Phys. Rev. B 52 15
34. Kampen T U, Schmitsdorf R F and Mönch W 1995 Appl. Phys. A 60 391-4
35. Schmitsdorf R F, Kampen T U and Mönch W 1995 Surf. Sci. 324 249-56
36. Schmitsdorf R F and Mönch W 1999 Eur. Phys. J. B 7 457-66
37. Miura Y, Fujieda S and Hirose K 1994 Phys. Rev. B 50 4893
38. Horcas I et al 2007 Rev. Sci. Instrum. 78 013705
39. Fukutani K, Iwai H, Murata Y and Yamashita H 1999 Phys. Rev. B 59 13021
40. Mönch W 1999 J. Vac. Sci. Technol. B 17 1867
41. Maeda K and Kitahara E 1998 Appl. Surf. Sci. 130-132 925-9
42. Zhu S et al 1999 Solid State Commun. 112 611-5
43. Werner P, Jäger W and Schüppen A 1993 J. Appl. Phys. 74 3846
44. Jnawali G et al 2006 Phys. Rev. B 74 195340
45. Bobisch C, Bannani A, Matena M and Möller R 2007 Nanotechnology 18 055606