Confinement-enhanced electron transport across a metal-semiconductor interface

Physical Review Letters

Volumn 87, Issue 5, 2001, Pages

  Altfeder, I B ^a   Golovchenko, J A ^a   Narayanamurti, V ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LEAD; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES; SEMICONDUCTOR QUANTUM WELLS;

BALLISTIC ELECTRON EMISSION MICROSCOPY; CONFINEMENT ENHANCED ELECTRON TRANSPORT; ELECTRON INJECTIN RATE; ELECTRON OSCILLATIONS;

ELECTRON TRANSPORT PROPERTIES;

EID: 37649027437     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)