Growth and modification of Ag islands on hydrogen terminated Si(100) surfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 13-15

  Butcher, M J ^a   Jones, F H ^a   Beton, P H ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL MODIFICATION; CRYSTAL GROWTH; DEPOSITION; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILVER; SURFACE PHENOMENA; VACUUM APPLICATIONS;

DANGLING BOND DEFECTS; HYDROGEN TERMINATED SILICON;

NANOSTRUCTURED MATERIALS;

EID: 0033712936     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591142     Document Type: Article

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