메뉴 건너뛰기




Volumn 18, Issue 5, 2007, Pages

Ultrathin Bi films on Si(100)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH; FILM GROWTH; GRAIN SIZE AND SHAPE; LOW ENERGY ELECTRON DIFFRACTION; NANOCRYSTALLINE SILICON; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS;

EID: 33947523150     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/5/055606     Document Type: Article
Times cited : (20)

References (10)
  • 1
    • 0032181949 scopus 로고    scopus 로고
    • Metastable structures and critical thicknesses: Ag on Si(111)-7 × 7
    • Weaver J H, Huang L and Chey S J 1998 Metastable structures and critical thicknesses: Ag on Si(111)-7 × 7 Surf. Sci. 416 L1101-6
    • (1998) Surf. Sci. , vol.416 , Issue.1-2
    • Weaver, J.H.1    Huang, L.2    Chey, S.J.3
  • 2
    • 0029346197 scopus 로고
    • Low temperature STM study on the growth of ultrathin Ag films on Si(111) 7 × 7
    • Rieder K H and Meyer G 1995 Low temperature STM study on the growth of ultrathin Ag films on Si(111) 7 × 7 Surf. Sci. 331-333 600-5
    • (1995) Surf. Sci. , vol.331-333 , pp. 600-605
    • Rieder, K.H.1    Meyer, G.2
  • 3
    • 0001662083 scopus 로고
    • Low temperature scanning tunnelling microscopy study of nucleation, percolation, and growth of ultrathin Ag films on Si(111)7 × 7
    • Meyer G and Rieder K H 1994 Low temperature scanning tunnelling microscopy study of nucleation, percolation, and growth of ultrathin Ag films on Si(111)7 × 7 Appl. Phys. Lett. 64 (26)
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.26
    • Meyer, G.1    Rieder, K.H.2
  • 4
    • 0029343054 scopus 로고
    • Epitaxial layer growth of Ag(111)-films on Si(100)
    • Horn-von Hoegen M et al 1995 Epitaxial layer growth of Ag(111)-films on Si(100) Surf. Sci. 331-333 575-9
    • (1995) Surf. Sci. , vol.331-333 , pp. 575-579
    • Horn-Von Hoegen, M.1    Al, E.2
  • 5
    • 0034226771 scopus 로고    scopus 로고
    • Epitaxial growth of single-crystal ultrathin films of bismuth on Si(111)
    • Nagao T et al 2000 Epitaxial growth of single-crystal ultrathin films of bismuth on Si(111) Japan. J. Appl. Phys. 39 4567-70
    • (2000) Japan. J. Appl. Phys. , vol.39 , Issue.PART 1 , pp. 4567-4570
    • Nagao, T.1    Al, E.2
  • 6
    • 20844443645 scopus 로고    scopus 로고
    • Nanofilm allotrope and phase transformation of ultrathin Bi film on Si(111)-7 × 7
    • Nagao T et al 2004 Nanofilm allotrope and phase transformation of ultrathin Bi film on Si(111)-7 × 7 Phys. Rev. Lett. 93 105501
    • (2004) Phys. Rev. Lett. , vol.93 , Issue.10 , pp. 105501
    • Nagao, T.1    Al, E.2
  • 7
    • 0001608955 scopus 로고    scopus 로고
    • Scanning tunnelling microscopy observation of bismuth growth on Si(100) surfaces
    • Naitoh M et al 1997 Scanning tunnelling microscopy observation of bismuth growth on Si(100) surfaces Surf. Sci. 377-379 899-903
    • (1997) Surf. Sci. , vol.377-379 , pp. 899-903
    • Naitoh, M.1    Al, E.2
  • 8
    • 0019539566 scopus 로고
    • Growth of bismuth layers on Si(100) surfaces
    • Kawazu A et al 1981 Growth of bismuth layers on Si(100) surfaces Japan. J. Appl. Phys. 20 553-60
    • (1981) Japan. J. Appl. Phys. , vol.20 , Issue.3 , pp. 553-560
    • Kawazu, A.1    Al, E.2
  • 9
    • 17044427191 scopus 로고    scopus 로고
    • Thin bismuth film as a template for pentacene growth
    • Sadowski J T et al 2005 Thin bismuth film as a template for pentacene growth Appl. Phys. Lett. 86 073109
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 073109
    • Sadowski, J.T.1    Al, E.2
  • 10
    • 0000392344 scopus 로고
    • Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy
    • Kaiser W J and Bell L D 1988 Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy Phys. Rev. Lett. 60 (14)
    • (1988) Phys. Rev. Lett. , vol.60 , Issue.14
    • Kaiser, W.J.1    Bell, L.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.