Ballistic electron microscopy of individual molecules

Science

Volumn 315, Issue 5820, 2007, Pages 1824-1828

  Bannani, Amin ^a   Bobisch, Christian ^a   Möller, Rolf ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; FULLERENE; ORGANIC COMPOUND; SILICON;

ADSORPTION; BISMUTH; ELECTRON MICROSCOPY; FULLERENE; MOLECULAR ANALYSIS; ORGANIC COMPOUND; SILICON;

ARTICLE; ELECTRIC POTENTIAL; ELECTRON; ELECTRONICS; ENERGY; MOLECULE; PRIORITY JOURNAL; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

EID: 34147192999     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1138668     Document Type: Article

References (40)

1. G. Timp et al., IEDM Tech. Digest, 55 (1999).
2. A. Javey, J. Guo, Q. Wang, M. Lundstrom, H. Dai, Nature 424, 654 (2003).
3. W. J. Kaiser, L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988).
4. L. D. Bell, W. J. Kaiser, Phys. Rev. Lett. 61, 2368 (1988).
5. V. Narayanamurti, M. Kozhevnikov, Phys. Rep. 349, 447 (2001).
6. P. L. de Andres, F. J. Garcia-Vidal, K. Reuter, F. Flores, Prog. Surf. Sci. 66, 3 (2001).
7. W. H. Rippard, A. C. Perrella, R. A. Buhrman, Appl. Phys. Lett. 78, 1601 (2001).
8. W. Li et al., J. Chem. Phys. B 109, 6252 (2005).
9. C. Troadec et al., Nanotechnology 15, 1818 (2004).
10. R. M. Feenstra, J. A. Stroscio, J. Tersoff, A. P. Fein, Phys. Rev. Lett. 58, 1192 (1987).
11. R. J. Hamers, R. M. Tromp, J. E. Demuth, Phys. Rev. Lett. 56, 1972 (1986).
12. B. C. Stipe, M. A. Rezaei, W. Ho, Science 280, 1732 (1998).
13. C. Joachim, M. A. Ratner, Proc. Natl. Acad. Sci. U.S.A. 102, 8801 (2005).
14. A. Nitzan, M. A. Ratner, Science 300, 1384 (2003).
15. J. Park et al., Nature 417, 722 (2002).
16. H. W. Kroto, J. R. Heath, S. C. O'Brien, R. F. Curl, R. E. Smalley, Nature 318, 162 (1985).
17. S. R. Forrest, Chem. Rev. 97, 1793 (1997).
18. K. Glöckler et al., Surf. Sci. 405, 1 (1998).
19. W. Schottky, Z. Phys. 113, 367 (1939).
20. F. Braun, Pogg. Ann. Phys. 153, 556 (1874).
21. W. Mönch, Electronic Properties of Semiconductor Interfaces (Springer-Verlag, Berlin, ed. 43, 2004).
22. G. Binnig, H. Rohrer, Ch. Gerber, E. Weibel, Appl. Phys. Lett. 40, 178 (1982).
23. G. Binnig, H. Rohrer, Ch. Gerber, E. Weibel, Phys. Rev. Lett. 50, 120 (1983).
24. H. W. Fink, H. Schmid, H. J. Kreuzer, A. Wierzbicki, Phys. Rev. Lett. 67, 1543 (1991).
25. C. Bobisch, A. Bannani, M. Matena, R. Möller, Nanotechnology 18, 055606 (2007).
26. 60 molecules, and 3 pA for the PTCDA molecules.
27. H. Sirringhaus, E. Y. Lee, H. von Känel, Phys. Rev. Lett. 73, 577 (1994).
28. C. R. Ast, H. Höchst, Phys. Rev. B 67, 113102 (2003).
29. E. I. Altman, R. J. Colton, Phys. Rev. B 48, 18244 (1993).
30. M. Prietsch, Phys. Rep. 253, 163 (1995).
31. 2. However, in the experiment, the total tunneling current is kept constant and the distance increases as the bias is increased. Assuming a linear dependence between the tunneling current and the bias voltage, this can be corrected by dividing by the bias voltage (or electron energy).
32. R. Yamachika, M. Grobis, A. Wachowiak, M. F. Crommie, Science 304, 281 (2004); published online 11 March 2004 (10.1126/science.1095069) .
33. T. Ono, K. Hirose, Phys. Rev. Lett. 98, 026804 (2007).
34. C. Rogero, J. I. Pascual, J. Gómez-Herrero, A. M. Baró, J. Chem. Phys. 116, 832 (2002).
35. I. Chizhov, A. Kahn, G. Scoles, J. Cryst. Growth 208, 449 (2000).
36. E. Umbach, M. Sokolowski, R. Fink, Appl. Phys. A 63, 565 (1996).
37. R. Temirov, S. Soubatch, A. Luican, F. S. Tautz, Nature 444, 350 (2006).
38. A. Hauschild et al., Phys. Rev. Lett. 94, 036106 (2005).
39. A. Hauschild et al., Phys. Rev. Lett. 95, 209602 (2005).
40. We thank H. Nienhaus and A. Lorke for fruitful discussions. Supported by the German Research Council within Sonderforschungsbereich 616, "Energy Dissipation at Surfaces."