Nitridation and oxynitridation of Si to control interfacial reaction with HfO2

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8498-8506

  Katamreddy, Rajesh ^a,b   Inman, Ronald ^a   Jursich, Gregory ^a   Soulet, Axel ^a   Takoudis, Christos ^b,c  

^a AIR LIQUIDE   (France)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c University of Illinois at Chicago   (United States)

Author keywords

Atomic layer deposition; Diffusion barrier layer; Hafnium oxide; Nitridation of silicon

Indexed keywords

SILICON;

ATOMIC LAYER DEPOSITION; ATOMIC-LAYER-DEPOSITED; BARRIER LAYER; DIFFUSION BARRIER LAYER; HAFNIUM OXIDE; INTERFACIAL REACTIONS; NITRIDATION OF SILICON; OXYNITRIDATION;

HAFNIUM COMPOUNDS;

EID: 50849142528     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.002     Document Type: Article

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