SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 102, Issue , 1996, Pages 417-422

EELS investigation of luminescent nanoporous p-type silicon

(4) Berbezier, I a Martin, J M b Bernardi, C c Derrien, J a

a CNRS (France)

b ECOLE CENTRALE DE LYON (France)

c ORANGE LABS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; INTERFACES (MATERIALS); LUMINESCENCE OF INORGANIC SOLIDS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING;

AMORPHOUS HYDROGENATED SILICON; CAPLAYERS; DIRECT BAND GAP SPECIES; INTERFACE PLASMON; INTRINSIC LUMINESCENCE; MICROSTRUCTURAL MODEL; PHOTOLUMINESCENCE DEGRADATION; QUANTUM CONFINEMENT; SURFACE/VOLUME RATIOS;

POROUS SILICON;

EID: 0030564856 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00090-6 Document Type: Article

Times cited : (27)

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