GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Gao, Fei ^a,b   Lee, S J ^a   Li, Rui ^a   Whang, S J ^a   Balakumar, S ^b   Chi, D Z ^c   Kean, Chia Ching ^c   Vicknesh, S ^c   Tung, C H ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRON DEVICES; GALLIUM ALLOYS; HAFNIUM COMPOUNDS; MOS DEVICES; PLASMAS; SEMICONDUCTING GALLIUM;

PLASMA NITRIDATION; SURFACE PASSIVATION;

PASSIVATION;

EID: 46049091194     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346743     Document Type: Conference Paper

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