Initial plasma oxidation kinetics of silicon: DC bias effects

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 98-101

  Kamioka, I ^a,b   Nakamura, K G ^a   Kawabe, T ^b   Kitajima, M ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Ellipsometry; Oxidation; Plasma processing and deposition; Silicon

Indexed keywords

DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRONS; ELLIPSOMETRY; FILM GROWTH; IONS; OXIDES; OXYGEN; PLASMA APPLICATIONS; REACTION KINETICS; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

DIRECT CURRENT BIAS EFFECTS; ELECTRON COLLISIONS; LANGMUIR PROBE MEASUREMENT; NEGATIVE BIAS; PLASMA OXIDATION; POSITIVE BIAS; REAL TIME ELLIPSOMETRY;

OXIDATION;

EID: 0030217696     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08584-7     Document Type: Article

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