Investigation of self-heating effects in AlGaN/GaN HEMTs

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 21-26

  Kuzmik, J ^a   Javorka, P ^a   Alam, A ^a   Marso, M ^a   Heuken, M ^a   Kordos, P ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; OHMIC CONTACTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSCONDUCTANCE;

CHANNEL TEMPERATURE; DISSIPATED POWER TRANSFER; DRAIN VOLTAGE; LOW FIELD ELECTRON MOBILITY; PARASITIC SOURCE RESISTANCE; POWER ADDED EFFICIENCY DEPRESSION; SELF HEATING EFFECTS; SOURCE DRAIN CURRENT DROP; THERMAL IMPEDANCE; TRANSISTOR DIRECT CURRENT CHARACTERIZATION METHOD;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035573237     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300°C
2. GaN MESFETs for high-power and high-temperature microwave applications
3. Measured microwave power performance of AlGaN/GaN MODFET
4. Self-heating in high-power AlGaN-GaN HFET's
5. Electron transport characteristics of GaN for high temperature device modeling