Analytical model for the transconductance of microwave Al m-Ga1-mN/GaN HEMTs including nonlinear macroscopic polarization and parasitic mesfet conduction

Microwave and Optical Technology Letters

Volumn 49, Issue 2, 2007, Pages 382-389

  Chattopadhyay, Manju K ^a   Tokekar, Sanjiv ^a  

^a DEVI AHILYA UNIVERSITY   (India)

Author keywords

2 DEG; AlmGam 1N GaN; Channel length modulation; MODFET; Nonlinear macroscopic polarization; Parasitic MESFET conduction; Transconduclance

Indexed keywords

GALLIUM NITRIDE; LIGHT POLARIZATION; MATHEMATICAL MODELS; NONLINEAR OPTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

CHANNEL LENGTH MODULATION; NONLINEAR MACROSCOPIC POLARIZATION; PARASITIC MESFET CONDUCTION; TRANSCONDUCLANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846582550     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.22126     Document Type: Article

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