Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of AlmGa1-mN/GaN MODFET

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 220-227

  Chattopadhyay, Manju K ^a   Tokekar, Sanjiv ^a  

^a DEVI AHILYA UNIVERSITY   (India)

Author keywords

AlGaN GaN; Gate capacitance; HEMT; Modelling

Indexed keywords

CAPACITANCE; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PARAMETER ESTIMATION; POLARIZATION; STRAIN MEASUREMENT; TEMPERATURE DISTRIBUTION;

ALGAN/GAN; GATE CAPACITANCE; MODELING;

ALUMINUM COMPOUNDS;

EID: 32344440618     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.016     Document Type: Article

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