Parasitic resistance and polarization-dependent polynomial-based non-linear analytical charge-control model for AlGaN/GaN MODFET for microwave frequency applications

Microwave and Optical Technology Letters

Volumn 38, Issue 5, 2003, Pages 371-378

  Korwal, Manju ^a   Haldar, S ^a   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

HEMT; Microwave device modeling; MODFET

Indexed keywords

CARRIER CONCENTRATION; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRON GAS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; NONLINEAR SYSTEMS; PIEZOELECTRIC DEVICES; POLYNOMIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

MODFET DEVICES;

MICROWAVE DEVICES;

EID: 0042196271     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.11064     Document Type: Article

References (19)

1. L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I.P. Smorchkova, S. Keller, S.P. Denbaars, and U.K. Mishra, AlGaN/AlN/GaN high-power microwave HEMT, IEEE Electron Device Lett 22 (2001), 457-459.
2. U.K. Mishra, Y.-F. Wu, B.P. Keller, S. Keller, and S.P. Denbaars, GaN microwave electronics, IEEE Trans Microwave Theory Techn 46 (1998), 756-761.
3. Y.-F. Wu, J.P. Ibbetson, P. Parikh, B.P. Keller, S. Keller, D. Kapolnek, and U.K. Mishra, Very high power density AlGaN/GaN HEMTS, IEEE Electron Device Lett 48 (2001), 586-590.
4. O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J Appl Phys 85 (1999), 3222-3233.
5. D. Delagebeaudeuf and N.T. Linh, Metal-(n) AlGaAs/GaAs two-dimensional electron gas field effect transistor. IEEE Trans Electron Devices 29 (1982), 955-960.
6. T.J. Drummond, H. Morkoc, K. Lee, and M.S. Shur, Model for modulation doped field effect transistors, IEEE Electron Device Lett 3 (1982), 338-341.
7. G.W. Wang and W.H. Ku, An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor, IEEE Trans Electron Devices 33 (1986), 657-672.
8. H. Rohdin and P. Roblin, A MODFET dc model with improved pinchoff and saturation characteristics, IEEE Trans Electron Devices 33 (1986), 664-672.
9. L. Gaun, A. Christou, G. Halkias, and D.F. Barbe, Modelling of current-voltage characteristics for strained and lattice mismatch HEMTs on InP substrate using a variational charge control model, IEEE Trans Electron Devices 42 (1995), 612-615.
10. S.J. Mahon and D.J. Skellem, Determination of device structure from GaAs/AlGaAs HEMT dc I-V characteristics, IEEE Trans Electron Devices 39 (1992), 1041-1049.
11. H.R. Yeager and R.W. Dutton, Circuit simulation models for the high electron mobility transistor, IEEE Trans Electron Devices 33 (1986), 682-692.
12. G. George and J.R. Hauser, An analytical model for MODFET capacitance voltage characteristics, IEEE Trans Electron Devices 37 (1990). 1193-1198.
13. 1-xN/GaN heterostructure field-effect transistors, App Phys Lett 73 (1998), 1856-1858.
14. Rashmi, S. Haldar, and R.S. Gupta, 2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET, Microwave Optical Technol Lett 29 (2001), 117-123.
15. N. Dasgupta and A. Dasgupta, A analytical expression for sheet-carrier concentration vs. gate voltage for HEMT modelling, Solid State Electronics 36 (1993), 201-203.
16. F. Sacconi, A.D. Carlo, P. Lugli, and H. Morkoc, Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs. IEEE Trans Electron Devices 48 (2001), 450-457.
17. K. Lee, M.S. Shur, T.J. Drummond, and H. Morkoc, Current-voltage and capacitance-voltage characteristics of modulation doped field effect transistors, IEEE Trans Electron Devices 30 (1983), 207-213.
18. H. Ahn and M.E. Nokali, An analytical model for high electron mobility transistors, IEEE Trans Electron Devices 41 (1994), 874-878.
19. Y.-F. Wu, S. Keller, P. Kozodoy, B.P. Keller, P. Parikh, D. Kapolnek, S.P. Denbaars, and U.K. Mishra, Bias dependent microwave performance at ALGaN/GaN MODFETs up to 100V, IEEE Electronic Device Lett 18 (1997), 290-292.