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Volumn 405, Issue 1-2, 2002, Pages 194-197

High growth rate deposition of oriented hexagonal InN films

(8) Yang, Fuh Hsiang a Jih Shang, d Hwang, b Chen, Kuei Hsien b Yang, Ying Jay a Lee, Tzung Han c Hwa, Luu Gen c Chen, Li Chyong a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

c FU JEN CATHOLIC UNIVERSITY (Taiwan)

d NONE

Author keywords

Indium nitride; MOCVD; Nanostructures; Raman; TEM

Indexed keywords

AMMONIA; CRACKING (CHEMICAL); HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SOLAR CELLS; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INDIUM NITRIDE (INN) FILMS;

THIN FILMS;

EID: 0037154912 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01754-0 Document Type: Article

Times cited : (27)

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